samfur Properties
TYPE
BAYANI
category
Samfuran Semiconductor mai hankali
Transistor – FET, MOSFET – Single
masana'anta
Infineon Technologies
jerin
CoolGaN™
Kunshin
Tape da Reel (TR)
Shear Band (CT)
Digi-Reel® Custom Reel
Matsayin samfur
daina
nau'in FET
N channel
fasaha
GaNFET (Gallium Nitride)
Lantarki-Source Voltage (Vdss)
600V
A halin yanzu a 25°C - Ci gaba da zubar da ruwa (Id)
31A (Tc)
Fitar da Wutar Lantarki (Max Rds On, Min Rds On)
-
On-resistance (max) a daban-daban Id, Vgs
-
Vgs(th) (mafi girman) a ID daban-daban
1.6V @ 2,6mA
Vgs (max)
-10V
Input capacitance (Ciss) a Vds daban-daban (max)
380pF @ 400V
FET aiki
-
Rashin wutar lantarki (max)
125W (Tc)
zafin aiki
-55°C ~ 150°C (TJ)
nau'in shigarwa
Nau'in Dutsen Surface
Kunshin na'urar mai bayarwa
PG-DSO-20-87
Kunshin / Rushewa
20-PowerSOIC (0.433 ″, nisa 11.00mm)
Lambar samfurin asali
Farashin IGOT60
Mai jarida da Zazzagewa
NAU'IN ARZIKI
MAHADI
Ƙayyadaddun bayanai
Saukewa: IGOT60R070D1
Jagoran Zaɓin GaN
CoolGaN™ 600 V e-yanayin GaN HEMTs Brief
Wasu takardu masu alaƙa
GaN a Adapters/Caja
GaN in Server da Telecom
Gaskiya da cancantar CoolGaN
Menene dalilin da yasa CoolGaN
GaN a cikin Cajin Mara waya
fayil ɗin bidiyo
CoolGaN™ 600V e-mode HEMT dandalin kimanta rabin gada wanda ke nuna GaN EiceDRIVER™
CoolGaN™ – sabon tsarin wutar lantarki
2500 W cikakken gada totem sandal sandar PFC kimanta hukumar ta amfani da CoolGaN™ 600V
Bayanan HTML
CoolGaN™ 600 V e-yanayin GaN HEMTs Brief
Saukewa: IGOT60R070D1
Rarraba muhalli da fitarwa
SIFFOFI
BAYANI
Matsayin RoHS
Mai yarda da ƙayyadaddun ROHS3
Matsayin Ji daɗin Danshi (MSL)
3 (168 hours)
Matsayin ISAR
Kayayyakin da ba su isa ba
ECN
EAR99
HTSUS
8541.29.0095
